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dopant implantation into the silicon substrate with non-planar surface掺杂剂注入到硅衬底与non-planar表面.pdf

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dopant implantation into the silicon substrate with non-planar surface掺杂剂注入到硅衬底与non-planar表面

Energy and Power Engineering, 2010, 2, 73-77 73 doi:10.4236/epe.2010.22011 Published Online May 2010 (http://www.SciRP.org/journal/epe) Dopant Implantation into the Silicon Substrate with Non-Planar Surface 1 2 Gennady A. Tarnavsky , Evgenii V. Vorozhtsov 1 Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia 2Khristianovich Institute of Theoretical and Applied Mechanics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia E-mail : vorozh@itam.nsc.ru Received January 3, 2010; revised February 9, 2010; accepted March 29, 2010 Abstract The influence of technological process parameters (aiming angle and implantation energy) on the distribu- tions of dopant concentrations in a silicon substrate is investigated by computer modeling. Keywords: Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants 1. Introduction one does not account for the expenses of intellectual ef- forts), with a possibility of considering hundreds and Advanced technologies of the design and manufacturing even thousands of variants, with a rapid and efficient of nano-electromechanical systems (NEMS technologies) analysis of their results as well as with