doping silicon nanocrystals with boron and phosphorus掺杂硅纳米晶体硼和磷.pdfVIP

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2012, Article ID 912903, 9 pages doi:10.1155/2012/912903 Review Article Doping Silicon Nanocrystals with Boron and Phosphorus Xiaodong Pi State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zhejiang, Hangzhou 310027, China Correspondence should be addressed to Xiaodong Pi, xdpi@ Received 29 April 2012; Accepted 21 August 2012 Academic Editor: Naoki Fukata Copyright © 2012 Xiaodong Pi. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for B- and P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned. 1. Introduction [11, 12] initiated the experimental study on the intentional doping of Si NCs that were embedded in silicon oxide. In the The electronic, optical, and magnetic properties of semicon- past few years, theoretical calculations have been carried out ductor nanocrystals (NCs