electrical characterization of traps in algangan fat-hemt’s on silicon substrate by c-v and dlts measurements电气特性的陷阱algangan fat-hemt在硅衬底c-v和dlt测量.pdfVIP

  • 3
  • 0
  • 约4.55万字
  • 约 6页
  • 2017-08-28 发布于上海
  • 举报

electrical characterization of traps in algangan fat-hemt’s on silicon substrate by c-v and dlts measurements电气特性的陷阱algangan fat-hemt在硅衬底c-v和dlt测量.pdf

electrical characterization of traps in algangan fat-hemt’s on silicon substrate by c-v and dlts measurements电气特性的陷阱algangan fat-hemt在硅衬底c-v和dlt测量

Journal of Modern Physics, 2011, 2, 1229-1234 doi:10.4236/jmp.2011.210152 Published Online October 2011 (http://www.SciRP.org/journal/jmp) Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements 1 1 1 2 Manel Charfeddine , Malek Gassoumi , Hana Mosbahi , Christophe Gaquiére , Mohamed Ali Zaidi1

您可能关注的文档

文档评论(0)

1亿VIP精品文档

相关文档