第二讲 工艺综述.pptVIP

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Micro Electrical Discharge Machining (University of Tokyo) Electrical discharge from sharp tip erodes substrate faster than tip 5 ?m resolution,but serial and slow 共同的缺点 串行？！ * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 不同类型的干法腐蚀 等离子体物理方法 气体化学反应 RIE DRIE Plasma Etching Steps Typical kinetic energy (KE) of an electron in plasma is 2-8 eV KE=1/2 mV2 =2/3 kT ? m= particle mass ? V= particle mean velocity ? k= Boltzmann constant ? T= temperature (K) 2 eV electron has T≈ 15,000 K V≈ 6×107cm/s =1,342.16176 mph Xenon Difluoride (XeF2) Etching Isotropic etching of Si High selectivity for Al, SiO2, Si3N4, PR, PSG 2XeF2+Si ? 2Xe+SiF4 Typical etch rates of 1 to 3 ?m /min Heat is generates during exothermic reaction XeF2 reacts with water (or vapor) to form HF Interhalogen (BrF3 ClF3) Etching Nearly isotropic profile Gases react with Si to form SiF4 Surface roughness: ～ 40 to 150 nm Masks: SiO2, SiN4, PR, Al, Cu, Au, and Ni RIE System Reactive Ion Etching (RIE) Asymmetrical parallel plate system Plasma, sheath and boundary layer Combination of physical and chemical etching Anisotropic etching  Disadvantages of RIE Conflict between etching rate and anisotropic profile ? Etching rate(+) ?Reactive species concentration(+) ?Gas pressure(+) ?Collision(+) ?Anisotropic(-) Conflict between damage of high etching rate and anisotropic profile － KE(+) ?Etching rate (+) ?damage(+) Classification is primarily based on how power is supplied to create plasma DC discharge (electrodes,500mTorr,inefficient, no longer in use in the IC industry) Radiofrequency (RF) capacitively coupled - 13.56 MHz is the primary frequency allowed by FCC - 300 mTorr, very popular in IC industry Microwave discharge - 2.45 GHz is the allowed frequency - low to high pressure - Very popular in diamond deposition Electron Cyclotron Resonance (ECR) discharg