a fast algorithm for the study of wave-packet scattering at disordered interfaces一个快速算法研究波包在无序散射界面.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 199-204 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces J. R. BARKER*, J. R. WATLING and R. C. W. WILKINS Nanoelectronics Research Centre, Department ofElectronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland, UK It has been known for many years that interface roughness scattering, particularly off the Si/SiO2 interface, is a limiting factor in device performance of MOSFETs. This becomes increasingly important as gate lengths are shrunk to decanano dimensions along with the move towards SiGe hetero-technology. However, analysis of interface transport is hampered by the lack of detailed physical models, especially for surfaces where intercalation occurs. This paper presents an efficient method for following the motion of wave-packets scattering off a rough interface. We are also able to calculated directly ab-initio interface scattering rates for use in Monte Carlo simulations. Keywords: Monte Carlo; Electron transport; Interface roughness scattering; Transition rates 1. INTRODUCTION scattering in the atomisti