annealing-induced modifications in physicochemical and optoelectronic properties of ag-doped nanostructured cds thin filmsannealing-induced修改在物理化学和cd ag-doped纳米薄膜的光电特性.pdfVIP

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 264027, 7 pages doi:10.1155/2012/264027 Research Article Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films Vidya S. Taur, Rajesh A. Joshi, and Ramphal Sharma Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004, India Correspondence should be addressed to Vidya S. Taur, vidutaur@ and Ramphal Sharma, rps.phy@ Received 25 February 2012; Revised 6 May 2012; Accepted 14 May 2012 Academic Editor: David Lee Phillips Copyright © 2012 Vidya S. Taur et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400◦C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of charac