ultrathin oxide passivation layer by rapid thermal oxidation for the silicon heterojunction solar cell applications超薄氧化物钝化层快速热氧化硅异质结太阳能电池的应用程序.pdfVIP

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2017-09-01 发布于上海
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ultrathin oxide passivation layer by rapid thermal oxidation for the silicon heterojunction solar cell applications超薄氧化物钝化层快速热氧化硅异质结太阳能电池的应用程序.pdf

ultrathin oxide passivation layer by rapid thermal oxidation for the silicon heterojunction solar cell applications超薄氧化物钝化层快速热氧化硅异质结太阳能电池的应用程序

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 753456, 5 pages doi:10.1155/2012/753456 Research Article Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications Youngseok Lee,1 Woongkyo Oh,2 Vinh Ai Dao,2, 3 Shahzada Qamar Hussain,1 and Junsin Yi1, 2 1 Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea 2 School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Suwon, Republic of

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ultrathin oxide passivation layer by rapid thermal oxidation for the silicon heterojunction solar cell applications超薄氧化物钝化层快速热氧化硅异质结太阳能电池的应用程序.pdfVIP