Dry Etching with Photoresist Masks （与光刻胶干蚀刻面具）.pdf

Dry Etching with Photoresist Masks Revised: 2013-11-07 Source: /downloads/application_notes.html Basics of Dry Etching Basic Dry Etch Mechanism If the ‘chemical’ mechanism dominates, etching occurs via the strong material selective for- mation of volatile compounds by radicals in the plasma which – towards high plasma pres- sure – hit the surface more and more isotropically. With the ‘physical’ mechanism dominating, etching occurs via the weak material selective sputtering of the substrate by ions which – accelerated by an electrical field – hit the sur- face with high kinetic energy and – if the free mean path (chamber pressure) is low enough – highly anisotropically. Plasma Reactive ion Reactive ion beam Sputter etching etching (RIE) etching (RIBE) etching Mechanism Chemical Chemical + physical Physical + chemical Physical Etching by… Radicals Radicals + ions Ions + radicals ions Anisotropy 0 + ++ +++ Selectivity ++ + 0 0 Pressure » 1 Torr » 0.1 Torr » 0.1 Torr » 0.01 Torr What Happens in the Plasma Typical etch gases for SiO -etching are mixtures of C F H , e. g. CF 2 x y z 4 (1) Formation of Fluoric-radicals by impact ionization: e- + CF CF + F + e- 4 3 (2) Formation of volatile silicon compounds: SiO + 4F SiF + O 2 4 2 Typical etch gases