Field Effect Transistors in Theory and Practice ...（场效应晶体管在理论和实践u2026u2026）.pdf

Freescale Semiconductor AN211A Application Note Rev. 0, 7/1993 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory and Practice INTRODUCTION increases, the depletion regions again spread into the channel because of the voltage drop in the channel which There are two types of field-effect transistors, the Junction reverse biases the junctions. As VDS is increased, the Field-Effect Transistor (JFET) and the “Metal-Oxide depletion regions grow until they meet, whereby any further Semiconductor” Field-Effect Transistor (MOSFET), or increase in voltage is counterbalanced by an increase in the Insulated-Gate Field-Effect Transistor (IGFET). The depletion region toward the drain. There is an effective principles on which these devices operate (current controlled increase in channel resistance that prevents any further by an electric field) are very similar — the primary difference increase in drain current. The drain-source voltage that being in the methods by which the control element is made. causes this current limiting condition is called the “pinchoff” This difference, however, results in a considerable difference voltage (Vp). A further increase in drain-source voltage in device