Enabling 3D NAND Devices of the Future （使未来的3 d NAND闪存设备）.pdf

Enabling 3D NAND Devices of the Future The Necessity for a Memory Modem™ in 3D Memories Hanan Weingarten DensBits Technologies Flash Memory Summit 2014 Santa Clara, CA 1 Outline  2D Vs 3D NAND  3D NAND – How Does It Work • p-BiCS example  3D NAND (unique) Considerations • Inter-Cell / Block Interference • TLC on 3D NAND • Scaling  Summary Flash Memory Summit 2014 Santa Clara, CA 2 2D Vs 3D NAND (1)  2D NAND limitations below 1xnm: • Lithographic limitations: - Additional scaling requires quad-patterning, Ultra-violet • Reliability limitations (retention, read and program disturbs): - Channel isolation deterioration - Stored charge with small number of electrons (a few dozens) - Increased cell to cell interference • Performance - Longer programming times - Longer read times Flash Memory Summit 2014 Santa Clara, CA 3 2D Vs 3D NAND (2)  3D NAND: - Solves many of the issues of 2D NAND - Instead of scaling x-y dimensions, scale-up - Scale back lithography: – Feature size 3Xnm – No double / quad patterning – Improved reliability - Higher performance (Samsung) - Scaling: – Through additional number of layers Flash Memory Summit 2014 Santa Clara, CA 4 3D NAND – How