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dram, sram, sdram的关系与区别（dram, ashamed, sdram的关系与区别）.doc

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dram, sram, sdram的关系与区别（dram, ashamed, sdram的关系与区别）

dram, sram, sdram的关系与区别（dram, ashamed, sdram的关系与区别） DRAM, SRAM, SDRAM of the relations and differences DRAM, dynamic random access memory, the need to constantly refresh, to save the data. And the ranks of address reuse, there are many page mode. SRAM, static random access memory, power case, does not need to be refreshed, data will not be lost, and generally not rank address multiplexing. Power loss of SDRAM, synchronous DRAM, namely data need to read and write clock synchronization. DRAM and SDRAM as the implementation process problems, capacity is SRAM. But the speed of reading and writing is not as good as SRAM, but now, SDRAM speed has been very fast, like a clock has 150 megabytes. Then read and write cycle is less than 10ns. The key is SRAM and SDRAM two S are not the same, which are Static and Synchronous. So SRAM and SDRAM are: static memory, synchronous dynamic memory. Flash is mainly used to save the required commands and data while the function of SRAM is the cache. Our computer memory is SDRAM, but it has been upgraded to DDR. SDRAM is much cheaper than SRAM, but it is not fast, in the future development of space is very large, because of its single structure, can improve its capacity.. And Nan flash memory combined with the basic direction, of course, is in the field of mobile phone, SRAM will be eliminated SRAM is used to save important data; SDRAM, no data after power off. Save the temporary data and procedures SRAM, SDRAM are used to program work, because in the system after power is stored in the data will be lost. FLASH for the long-term preservation of data, such as: system configuration information, procedures etc.. The SRAM interface circuit is simple, commonly used in small systems, the SDRAM interface is relatively complex, need the corresponding controller support, but because of large capacity, low price, fast access speed, so it is commonly used in applications where high demands on memory capacity and processing speed, in this field, the