led技术指标（Led technical index）.doc

led技术指标（Led technical index） This paper contributed by bydzhongliang. Doc document may at the WAP end of the browsing experience poor. Suggest you select TXT, or download the source file to the machine view. Introduce the technical parameters of LED This is a single LEDIF=20mA. With the development and application of power LED, since that temporary LED life of 106 hours. Foreign scholars believe that LED light attenuation percentage value as the life basis. Such as the LED light attenuation is the original 35% life 6000h LED optoelectronic devices electronic display using the compound material PN. With the electrical characteristics of PN junction junction devices: I-V characteristics, C-V characteristics and optical properties of the spectral response, light intensity, directivity characteristics and thermal characteristics of time. The electrical properties of 1led The applied positive bias indicates low contact resistance, the main performance parameters of preparing 1.1I-V characterization of LED chip for pn. LEDI-V has the characteristics of nonlinear and rectifying properties: unidirectional conductivity. Contrary to the high contact resistance. When V Va Electric is overcome because many carrier diffusion and the formation of electric barrier, The 1 is dead: figure OA or OA section) a For V0 threshold voltage. At this time R; the turn-on voltage for different LED value is different, GaA 1V GaA sP 1.2VGaP 1.8VGaN red 2.5V 2 positive working area: current IF and the exponential relationship between the voltage applied IF=ISeqVF/KT - 1-IS is the reverse saturation current V, VF positive work area IF with VF index rose IF=ISeqVF/K V 0. T 3 dead reverse V 0 PN with reverse bias The reverse leakage current of IRV=-5V, V=-VR. GaP 0VGaN for 10uA There is a sudden increase in IR and breakdown. Because of the different types of compound, 4 reverse breakdown V -VRVR Called reverse breakdown voltage; voltage VR corresponding to IR as the reverse leakage current. Whe