polycrystalline silicon isfets on glass substrate多晶硅isfets在玻璃衬底上.pdf

Sensors 2005, 5, 293-301 sensors ISSN 1424-8220 © 2005 by MDPI /sensors Polycrystalline Silicon ISFETs on Glass Substrate Feng Yan 1,*, Pedro Estrela 1, Yang Mo 1, Piero Migliorato 1, # and Hiroshi Maeda 2 1Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, United Kingdom 2Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwa- gun, Nagano-ken 399-0293, Japan * Author to whom correspondence should be addressed. E-mail: fy206@eng.cam.ac.uk. # E-mail: pm@eng.cam.ac.uk Received: 1 June 2004 / Accepted: 9 May 2005 / Published: 10 May 2005 Abstract: The Ion Sensitive Field Effect Transistor (ISFET) operation based on polycrystalline silicon thin film transistors is reported. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with PE-CVD Si N deposited on top of a conductor, which also 3 4 provides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity (54 mV/pH) and stable operation have been achieved. Temperature effects have also been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The shift incre