高密度相变化记忆体的多阶操作之探究-宜兰大学.pdfVIP

高密度相變化記憶體的多階操作之探究 1 2★ 林秉謙 、江孟學 1.國立宜蘭大學電子工程學系學生 2.國立宜蘭大學電子工程學系教授 摘要 揮發性記憶體是現今記憶體市場上的一個重要指標，在過去的幾十年，行動產品愈是輕 薄，並增加許多功能且具有更大存取空間，隨著記憶體的蓬勃發展及市場需求，人們成功研 發出了非揮發記憶體技術，其代表元件是快閃記憶體，因元件快速微縮，積體電路中密度增 加，記憶容量加大。新式記憶體元件在近幾年來因為迫切需要，配合半導體製程技術的進步， 進而不斷持續研究開發，以挑戰電晶體尺寸上的微縮限制，並促使記憶體擁有更高密度及容 量。在此論文中，我們利用控制脈波寬度及電流大小以實現高密度多階 (Multi-level)的設計概 念，並且藉由操作脈波的遞增、遞減，以及相關參數的設定，從中改善元件上的限制，在更 多階位元之使用做探討，而我們也預期我們所提出的多階記憶胞(multi-level cell: MLC)的操作 方法能有效的節省功率，並達到真正的低功率消耗。 關鍵字： 非揮發性記憶體、相變化記憶體、多階記憶胞、操作脈波、高密度記憶體 ★. 通訊作者 E-Mail: ctwang@niu.edu.tw Design insights of high-density multi-level phase-change memory cell Bing-Cian Lin1 and Meng-Hsueh Chiang2★ 1. Student, Department of Electronic Engineering, National Ilan University 2. Professor, Department of Electronic Engineering, National Ilan University Abstract Volatile memory has been a major market in semiconductor industry. In the past few decades, more mobile products with increased functions and larger storage were released. Following the technology progress and market’s demand, non-volatile memory technology has been developed successfully, especially in recent years. Among the nonvolatile memory products, flash memory has been the main stream. Due to fast increase in memory density and demand in data storage, several novel memory structures are emerging, which can potentially overcome the scaling obstacle in conventional flash memory. In this work, we propose novel programming pulses for phase change memory in order to achieve multi-level design. By properly setting the the operation pulses and the relevant pa