电子辐照对大直径SI-GaAs单晶性能影响的研究.pdfVIP

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电子辐照对大直径SI-GaAs单晶性能影响的研究.pdf

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ABSTRACT Semi-insulating Gallium Arsenic (SI-GaAs) is a kind of semiconductor with semi-insulating properties, higher mobility ， direct and wide band-gap. The semiconductor devices made by gallium arsenide have the characteristics of thermostable, low noise, high speed, high frequency, higher radiation hardness etc, and is an exensive application in high-tech field such as communication device, night vision technology and detector. With the progress of nuclear and space technology, demand is increasing for the semiconductor devices used in the radiation environment. In current commercial SI-GaAs crystal growth process, Liquid Encapsulated Czochralski (LEC) method and Vertival Gradient Freeze (VGF) method are major technology. Therefore, the investigation on radiation characteristics of LEC and VGF SI-GaAs is of great application value. In this paper, we mainly focus on the structural and electrical properties in large diameter LEC and VGF SI-GaAs after electron irradiation. The patterns of defects were investigated by means of ultrasonic AB etching, metallurgical microscope and infared technique in as-grown LEC and VGF SI-GaAs, and different patterns of dislocations and micro-defects were observed. The concentration and radial distribution of EL2 defect and impurity C are characterized by Fourier transform infrared spectroscopy (FTIR). The structure properties induced by electron irradiation were studied by Raman spectra. And the influence of irradiation and anne