S波段功率放大器ADS设计.pdfVIP

S-Band Power Amplifier Design Report Requirements: Amplifier type : Gallium Nitride Power Amplifier Transistor MAGX-00035-015000P_28 Operating frequency: 2.8 GHz Average RF power gain : 10dB Output P1dB: Larger than 40dBm Input return loss: 19dB Substrate material: Rogers RO4003, = 3.55, 8 mil thickness substrate and 0.5 oz copper The procedures to design a power amplifier can be summarized as follows, 1) Stability test of the transistor 2) Bias network design and optimization 3) Input and output design and optimization 4) Harmonic Balance Simulation or XDB simulation I. Stability Test As long as the stability factor is larger than unity and stability measurement is positive, the transistor is unconditionally stable. Fig. 1 Stability test The results of StabFact1 and StabMeas are: Fig. 2 Stability factor Fig. 3 Stability measurement As the StabFact is larger than Unity and StabMeas is positive, so this trans istor is unconditionally stable, and we don’t need to take other measures. II. Bias network design and optimization Because we use HEMT type transistor, here I use FET Curve Tracer to find the Bias point. Fig. 4 DC curve trace The result of this DC curve-tracer is: Fig. 5 DC characteristics Because we use VDD=28 V, Idq=35 mA S parameters, so here I choose the Bias point Vds=3.75 V, and Ids=35 mA. Then we can use Transistor Bias Utility to design the Bias circuit. Fig. 6 SmartComponent for bias point design Then ‘Push into Hierarchy’ can give us the ADS-designed bias circuit, as shown below, Fig.7 DA_FETBias1 after ‘Push into Hierarchy’ So the bias circuit now becomes: