CVD法制备锑掺杂ZnO薄膜及其发光器件的特性研究.pdfVIP

ZnOII-VI E 3.37eV g 60meVZnO ZnO n ZnO p ZnO p ZnO CVD n-GaN/Al O Sb p ZnO 2 3 p-ZnO/n-GaN LED 1 CVD n-GaN/Al O SbZnO 2 3 Sb ZnO Sb Sb ZnO 002Sb Hall Sb ZnO p Sb O /Zn 1:4 Sb p ZnO 2 3 ZnO CVD 2CVD Sb p-ZnO/n-GaN -I-Vp-ZnO/n-GaN 3.7V 8.5V Sb ZnO ZnO p 30mA EL3.25eV 2.54eV 1:1ZnO ZnO Sb ZnO/GaN Preparation and Investigation of Sb doped ZnO Thin Films and Light Emitting Device by CVD Method Zinc oxide (ZnO) is II-VI semiconductor material with a wide direct band gap (E ) of g 3.37 eV and a relatively large exciton binding energy of 60 meV at room temperature, which makes ZnO a promising semiconductor material for fabricating ultraviolet light-emitting diodes (LEDs) and laser diodes, thin film transistors, ultraviolet detectors and gas sensors, etc. It is well known that unintentionally doped ZnO is intrinsically n type. At present it is hard to fabricated reliable and reproducible p type ZnO. Therefore, most efforts have been focused attention to obtain p-type ZnO materials. In this paper, aiming at the hot problem of the preparation on p-ZnO materials at home and abroad, the different concentration Sb doped ZnO thin films and p-ZnO/n-GaN heterojunction LED were successfully prepared by simple chemical vapor deposit