Transport of two-dimensional topological insulators with defects带缺陷的二维拓扑绝缘体的输运研究.pdfVIP

摘 要 拓扑绝缘体是现代凝聚态物理的一个热点。本文主要采用了非平衡格林函数方法计 算二维拓扑绝缘体——HgTe量子势阱的电导。通过计算加磁场前后HgTe量子势阱的电 导，以及分别加入单缺陷和双缺陷的HgTe量子势阱的电导，来了解外加磁场和缺陷对 HgTe量子势阱输运的影响。我们主要得到了以下结论： 1. 在磁场中，当HgTe量子势阱加入单缺陷后，体系的边缘态被破坏，能带之间出 现了一个小缝隙，电导出现了波动。发现当缺陷的面积大于一定值的时候，体系会出现 零电导平台，并且随着缺陷面积的增加而变宽。 2. 在磁场中，当HgTe量子势阱加入双缺陷后，体系中的耦合作用增强，电子会出 现散射现象。在自旋单态中由于电子相位的改变产生了干涉现象，使其电导随着磁通量 的改变而周期振荡（AB振荡）。这种AB振荡只有在自旋向上的电子中产生，自旋向下 的电子不会产生。 关键词：电导量子化 量子点接触 格林函数方法 HgTe量子势阱 拓扑绝缘体 量子 自旋霍尔效应 Abstract Topological insulator is one of the most attractive areas in modern condense matter physics. In this paper, with the help of the nonequilibrium Green’s function, we study the transport properties of the two dimension (2D) topological insulator (HgTe quantum well). We calculated the conductance of HgTe quantum well with single defect or two defects in magnetic field ，in order to understand its changes in the transport by magnetic field and defects. We mainly got the following conclusions: 1. In magnetic field when HgTe quantum well join a square defects,the boundary structure of HgTe quantum well will be broken.And there is a small gap between energy bands. The conductance of the system fluctuates. When the defect area is greater than a certain value, system will arise 0 conductance platform,and increase with the area of the defect. 2. In magnetic field when HgTe quantum well join two square defects,coupling in the system will enchance. Electron scattering phenomenon will appear. Because electronic phase changes, electrons arise interference phenomenon. And we can observe AB effect in the current of spin up.It wont appear in the current of spin down. Key words: