MB85R1001ANC-GE1;中文规格书,Datasheet资料.pdf

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit (128 K × 8) MB85R1001A ■ DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant 2 improvement over the number of read and write operations supported by Flash memory and E PROM. The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • Bit configuration : 131,072 words × 8 bits • Read/write endurance : 1010 times • Operating power supply voltage : 3.0 V to 3.6 V • Operating temperature range : − 40 °C to + 85 °C • Data retention : 10 years ( + 55 °C) • Package : 48-pin plastic TSOP (1) Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2011.7 / MB85R1001A ■ PIN ASSIGNMENTS (TOP VIEW) A11 1 48 OE A9 2 47 NC NC 3 46 VSS A8 4