MSC0207GE台湾摩矽MOS管.pdf

MSC0207GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● V = 20V,I =7A DS D RDS(ON) 27mΩ @ VGS=2.5V RDS(ON) 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM Lead Free ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ●PWM application ●Load switch Marking and pin assignment PIN Configuration TSSOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC0207GE MSC0207GE TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 7 A Drain Current-Pulsed (Note 1)