MOCVD及外延关键之专利.pptVIP

Double buffer layer Materials : GaN or AlN Tg : 400 ℃ Thickness : 20 nm Epitaxial Lateral Overgrowth Figure 2. Schematic of ELO process for GaN. The GaN emerging from the window regions has a high density of threading dislocations (~1010 per cm2), whereas the GaN overgrowth on the Si02 stripes has a drastic reduction in dislocation density to ~104 per cm2 or less. Epitaxial Lateral Overgrowth Nichia ( Nakamura ) J. Mater. Res., Vol. 14, No. 7, Jul 1999 * CST SAVVY MOCVD 简介 Content Introduction The comparison of Epitaxial Techniques The mechanism of MOCVD The comparison of various MOCVD The principle of MO Epitaxy Application Introduction MOCVD之命名 MOCVD → metal-organic chemical vapor deposition (金屬有機的 化學氣相沉積) OMVPE → organometallic vapor-phase epitaxy (有機金屬的 氣相磊晶) ( MOCVD, OMVPE, MOVPE, OMCVD ) The comparison of Epitaxial Techniques Liquid-Phase Epitaxy (LPE) ? 液相磊晶 Vapor-Phase Epitaxy (VPE) ? 氣相磊晶 Organmetallic Vapor-Phase Epitaxy (OMVPE) ?有機金屬氣相磊晶 Molecular-Beam Epitaxy (MBE) ?分子束磊晶 Chemical-Beam Epitaxy (CBE) ? MOCVD MBE (MOMBE) The Mechanism of MOCVD Gas Mixing Box Carrier gas Hydride source MO source Lamina flow field Reactor Gas flow (Horizontal Vertical) Heater element ( RF-induction Resistance heater ) Cooling system Down Stream Exhaust Auto Control Safety Control System Gas Mixing Box – Carrier Gas Gas Mixing Box – Hydride Source Gas Mixing Box – MO Source The lamina flow field The down stream Exhaust Auto Control System The comparison of various MOCVD Horizontal Reactor AIXTRON THOMAS SWAN Vertical Reactor VEECO Two-flow MOCVD Nichia → Nakamura Three-flow MOCVD NIPPON SANSO Horizontal Reactor --- I Aix 2400/2600 G3 reactor Horizontal Reactor --- II Horizontal Reactor --- III Vertical Reactor Two-flow MOCVD Three-flow MOCVD The principle of MOCVD’s Epitaxy MOCVD 磊晶機制 Using metal alkyls as sources Chemical reaction Ga(CH3)3 + NH3 → GaN + ….. Ga(CH3)3 +In(CH3)3 + NH3 → InGaN + ….. Ga(CH3)3 +Al(CH3)3