IC设计专业词汇.docVIP

英文不行的,下这个下来,在电子行业基本上不要其他字典了....% B+ a. T- Q V) P6 Y3 x E1 backplane背板6 a8 s! B9 A \3 U3 t+ Q2 Band gap voltage reference 带隙电压参考- I, i h4 J7 B ?! z3 benchtop supply工作台电源/ d* T {- w C4 Block Diagram 方块图5 W( ?; |% n7 }7 N0 [5 Bode Plot 波特图5 d) M) r5 n N$ y$ X6 Bootstrap自举- n2 S2 Y: @2 t) Z$ J) ?+ s8 X6 x% i7 |0 c2 Q! V4 r: Z4 U. r7 Bottom FET Bottom FET3 Y8 U K$ t l+ g i7 _$ t# k8 bucket capcitor 桶形电容8 V7 O2 s ?3 C+ q# E- S3 g2 c* Q: r3 w9 chassis 机架2 u7 ~: F. d; ?4 a! v5 \10 Combi-sense Combi-sense% ]/ q. Q; g b$ C l11 constant current source恒流源, `% t0 b4 K( o% B# n, ^12 Core Sataration铁芯饱和; e# _3 {9 a( j13 crossover frequency 交叉频率0 ? j6 s: x1 d# z3 h+ Y14 current ripple纹波电流4 X0 ^6 i: g8 m! d N/ G/ Q5 k6 n( C1 U15 Cycle by Cycle 逐周期2 ^8 P K [ u. w$ L5 \9 l! o16 cycle skipping周期跳步9 c4 C$ | ?5 N: t3 J/ ` k) u* Q17 Dead Time 死区时间 A [9 ?. q0 E6 }18 DIE Temperature核心温度, [4 \- { F/ H* r, t2 B19 Disable 非使能，无效，禁用，关断5 H8 g C# ], j7 a8 n1 ~0 o20 dominant pole主极点 s0 Z I G; R4 i+ f; M. R21 Enable 使能，有效，启用: ]3 Z [, O; V( T22 ESD Rating ESD额定值! T _/ L o- u, y* L23 Evaluation Board 评估板. w: P8 a$ k% o7 b q: ?# S24 Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied.超过下面的规格使用可能引起永久的设备损害或设备故障。建议不要工作在电特性表规定的参数范围以外。. c0 M: J% p: Y- j Y. p25 Failling edge下降沿% d0 V0 h# i* Z0 [26 figure of merit 品质因数. U q N E- H27 float charge voltage浮充电压) t. g# A5 `3 I28 flyback power stage 反驰式功率级: n% |, d T. R8 ?29 forward voltage drop前向压降 E9 m t v+ {30 free-running 自由运行5 L0 o+ w C; j5 N H$ r a j; i; i7 C0 Z31 Freewheel diode续流二极管1 n, H; _( }/ Q: Y4 H$ w/ B32 Full load满负载) J; X) [) | m- U- m* K33 gate drive栅极驱动( @! `% ~ p b34 gate drive stage栅极驱动级 I: |1 E/ j1 A) L4 |4 a35 gerber plot Gerber图2 Y! m7 ~; o+ S! D/ n) T36 ground plane接地层- k I5 |( v+ D9 |6 y37 Henry电感单位：亨利3 O: a6 c3 x) p0 [38 Human Body Mod