可以 Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation 1-s2.0-S0927024812004515-main.pdfVIP

Solar Energy Materials Solar Cells ] (]]]]) ]]]–]]] Contents lists available at SciVerse ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation T. Ohshima a,n, S. Sato a, M. Imaizumi b, T. Nakamura b, T. Sugaya c, K. Matsubara c, S. Niki c a Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370–1292, Japan b Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki 305–8505, Japan c National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305–8568, Japan a r t i c l e i n f o Abstract: The radiation response of GaAs PiN solar cells with 50 stacked layers containing self-aligned In0.4Ga0.6As quantum dots (QDs) was compared to that of GaAs PiN solar cells with non QD layers. 16 2 Those solar cells were radiated with 1 MeV electrons up to 1 10 /cm , and the change in their Keywords: electrical characteristics under AM 0 was investigated using an in-situ measurement technique. After Quantum Dot (QD) solar cells 16 2 Electron irradiation effects electron irradiation at 1 10 /cm , the value of open circuit voltage (VOC) for the In0.4Ga0.6As 50 QD In-situ measureme