v.goiffon文献汇总(按时间排序).docx

V.Goiffon文献汇总:2013-2015年[1-20]参考文献 [1] Gaillardin M, Martinez M, Girard S, et al. High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62(33): 1226-1232. [2] Pelamatti A, Belloir J, Messien C, et al. Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62(4): 1200-1207. [3] Raine M, Goiffon V, Paillet P, et al. Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61(61): 2826-2833. [4] Marcelot O, Estribeau M, Goiffon V, et al. Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61(3): 844-849. [5] Goiffon V, Estribeau M, Michelot J, et al. Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors[J]. IEEE Journal of the Electron Devices Society, 2014, 2(4): 65-76. [6] Virmontois C, Toulemont A, Rolland G, et al. Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61(61): 3331-3340. [7] Goiffon V, Estribeau M, Cervantes P, et al. Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61(61): 3290-3301. [8] Virmontois C, Goiffon V, Robbins M S, et al. Dark Current Random Telegraph Signals in Solid-State Image Sensors[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60(61): 4323-4331. [9] Lalucaa V, Goiffon V, Magnan P, et al. Single Event Effects in 4T Pinned Photodiode Image Sensors[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60(61): 4314-4322.[10] Raine M, Goiffon V, Girard S, et al. Modeling Approach for the Prediction of Transient and Perma