硅通孔电镀填充铜的蠕变性能-北京工业大学学报.PDFVIP

第42卷 第6期 北 京 工 业 大 学 学 报 Vol.42 No.6 2016年 6月 JOURNAL OF BEIJING UNIVERSITY OFTECHNOLOGY Jun. 2016 硅通孔电镀填充铜的蠕变性能 武摇 伟,秦摇 飞,安摇 彤,陈摇 沛,宇慧平 (北京工业大学机械工程与应用电子技术学院,北京摇 100124) 摘摇 要:为了研究TSV鄄Cu 的蠕变性能,首先利用典型的TSV工艺制作了电镀 Cu 的TSV试样,然后利用纳米压痕 法对TSV鄄Cu进行了压痕蠕变测试. 采用恒加载速率/ 载荷与恒载荷法相结合的方式,对TSV鄄Cu 的蠕变行为进行 了研究,测量了TSV鄄Cu在不同压入应变速率和最大压入深度条件下的蠕变行为.通过对保载阶段的数据进行处 理,得到了不同加载条件下的蠕变速率敏感指数m. 结果表明:压入应变速率和最大压入深度等加载条件对m 的 影响不很明显. 关键词:硅通孔;TSV鄄Cu;纳米压痕;蠕变速率敏感指数 中图分类号:U461;TP308 文献标志码:A 文章编号:0254-0037(2016)06-0837-06 doi:10.11936/ bjutxb2015030040 Creep Behavior of Electroplated Cu for Through鄄Silicon Via Filling WU Wei,QIN Fei,AN Tong,CHEN Pei,YU Huiping (College of Mechanical Engineering and Applied ElectronicsTechnology, Beijing University of Technology,Beijing 100124,China) Abstract:As through鄄silicon via (TSV) is the core structural element of 3D integration or packaging, and the performance of TSV鄄Cu is critical for TSV reliability. This paper studied the creep behavior of TSV鄄Cu comprehensively. TSV鄄Cu samplewaspreparedby regularTSVprocess,andthennanoindention was used to determine the creep behavior of TSV鄄Cu at room temperature. A method of combining the constant loading rate/ load test and the constant load test was introduced for the creep behavior testing. Therefore,the creep behaviors of TSV鄄Cu under various loading conditions were analyzed. The creep strain rate sensitivity m can also be obtained by processing the data from constant loading stage. Results show that m is independent with indentation strain rates and maximum indentation depths. Key words:through鄄silicon鄄via (TSV);TSV鄄Cu;na