铜基底上生长石墨烯单晶的研究 【毕业论文】.docxVIP

学号 2010301040242 密级________________ 武汉大学本科毕业论文铜基底上生长石墨烯单晶的研究院（系）名 称： 化学与分子科学学院专 业 名 称： 应用化学学 生 姓 名： 指 导 教 师： 教授二○***年五月BACHELOR’S DEGREE THESISOF WUHAN UNIVERSITYThe Growth of Single-Crystal Graphene on Copper Substrates College: College of Chemistry and Molecular Science Subject: Applied Chemistry Name: Directed by: May 20 郑 重 声 明本人呈交的学位论文，是在导师的指导下，独立进行研究工作所取得的成果，所有数据、图片资料真实可靠。尽我所知，除文中已经注明引用的内容外，本学位论文的研究成果不包含他人享有著作权的内容。对本论文所涉及的研究工作做出贡献的其他个人和集体，均已在文中以明确的方式标明。本学位论文的知识产权归属于培养单位。本人签名： 日期： 摘 要作为一种新型的二维材料，在近十年中石墨烯因其各种独特的性质吸引了全世界科学家的目光。超高的电子迁移率，良好的透光性能以及很高的机械强度使其在电子及光学器件的制备领域具有广阔的应用前景。近来出现的化学气相沉积法（CVD）更是为大规模制备大面积、高质量的石墨烯铺平了道路。然而，CVD法制备的石墨烯往往是多晶的，其性质受晶界影响很大。因此接下来面临的挑战之一就是大晶畴石墨烯单晶的生长。本文对铜基底上生长石墨烯单晶的最新进展进行了总结。在结合前人之成果的基础上，采用铜基底（包括固态铜和液态铜）催化剂尝试生长较大晶畴的石墨烯单晶。实验着重于生长窗口的探索，生长参数优化和结果表征。通过对所获得的石墨烯单晶进行光学显微镜（Optical Microscope, OM）、拉曼光谱（Raman Spectra）和扫描电子显微镜（Scanning Electron Microscope, SEM）的表征，对石墨烯的生长机理进行了研究，并对影响生长结果的诸多因素给予了解释。关键词：石墨烯单晶；化学气相沉积法；铜基底；生长机理ABSTRACTAs a new two-dimensional (2D) material, graphene has attracted worldwide attention over the past decade due to its unique properties. Ultrahigh electron mobility, perfect light transmittance and high tensile strength bring it broad prospects in the manufacture of electronic and optical devices. Recently developing chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next challenge of graphene growth relies on the synthesis of large graphene single crystals. This thesis arranged the lasted experimental progress of graphene single crystal growth by copper. In the experimental section, we used liquid and solid copper as catalysts to prepare graphene single-crystal with large-domain and summarized our experimental experience by combining the achievements of previous. The main attention was