p型层结构与掺杂对GaInN发光二极管正向电压温度特性的影响.PDFVIP

p型层结构与掺杂对GaInN发光二极管正向电压温度特性的影响 毛清华 刘军林 全知觉 吴小明 张萌 江风益 Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltagecharacteristicofGaInNlight-emittingdiode MaoQing-Hua LiuJun-Lin QuanZhi-Jue WuXiao-Ming Zhang Meng Jiang Feng-Yi 引用信息Citation: ActaPhysicaSinica, ,107801(2015) DOI: 10.7498/aps.64.107801 在线阅读Viewonline: /10.7498/aps.64.107801 当期内容Viewtableofcontents: /CN/Y2015/V64/I10 您可能感兴趣的其他文章 Articles youmaybeinterestedin 晶圆键合和激光剥离工艺对GaN基垂直结构发光二极管芯片残余应力的影响 Effect of wafer bonding and laser liftoff process on residual stress