硅衬底GaN基LED薄膜芯片的应力调制-发光学报.PDFVIP

第37卷摇 第8期 发摇 光摇 学摇 报 Vol郾37 No郾8 2016年8月 CHINESEJOURNAL OF LUMINESCENCE Aug. ,2016 文章编号:1000鄄7032(2016)08鄄0979鄄05 硅衬底 GaN基LED薄膜芯片的应力调制 1* 1 2 汤英文 ,熊传兵 ,王佳斌 (1. 闽南师范大学 物理与信息工程学院,福建 漳州摇 363000;摇 2. 南昌大学 国家硅基LED工程技术研究中心,江西 南昌摇 330047) 摘要:将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片, 并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的 应力变化。 研究发现:垂直结构LED薄膜芯片在160 ~180 益下退火应力释放明显,200 益时应力释放充分, GaN的晶格常数接近标准值。 继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值 附近波动。 扫描电子显微镜给出的bonding层中Ag鄄In合金情况很好地解释了薄膜芯片应力的变化。 关摇 键摇 词:硅衬底;GaN;应力;XRD;Ag鄄In 中图分类号:TN304摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0979 Stress Modulation of GaN Based LED Thin Film Chip on Silicon Substrate 1* 1 2 TANG Ying鄄wen ,XIONG Chuan鄄bing ,WANGJia鄄bin (1. College of Physics and Information Engineering,Minnan Normal University,Zhangzhou363000,China; 2. National Engineering Technology Research CenterforLED on SiSubstrate,Nanchang University,Nanchang 330047,China) *Corresponding Author,E鄄mail:t鄄y鄄w2002@ Abstract:Vertical structured thin film GaN LEDs on Si substrate were fabricated by wafer boding and substrate removing process. The LED chips were annealed at various temperatures,and high鄄 resolution X鄄ray diffraction (HRXRD) measurements were performed to analyze the stress in GaN films. The results show that the annealing within 160 -180 益 can obviously reduce the stress in GaN thinfilm,and the stresscan befully released at200 益 and the measured lattice constantsare close to the standard values of bulk GaN. Annealing at higher temperatures,the lattice constants of the Ga