电沉积自旋阀多层膜及其巨磁电阻效应研究.pdfVIP

电沉积自旋阀多层膜及其巨磁电阻效应 姜莹，姚素薇，张卫国 （天津大学化工学院杉山表面技术研究室，天津 300072，中国） 摘 要：自旋阀结构由于具有低饱和磁场和较高的磁灵敏度，已成为磁头和磁存储领域中最具应用前景的巨磁 电阻材料。与物理法相比，电化学方法具有设备简单、成本低廉、操作可控等优势，是制备巨磁电阻薄膜材 料的优良途径。本论文首次采用双槽控电位电沉积法在n-Si(111) 晶面上制备了[Ni80Fe20/Cu/Co/Cu]n 自旋阀多层 膜，利用X射线衍射（XRD ）对多层膜的超晶格结构和生长取向进行了表征。采用四探针法研究了自旋阀的 巨磁电阻性能，并通过振动样品磁强计（VSM ）测试了自旋阀的磁滞回线。当自旋阀的结构为 [NiFe(2.8nm)/Cu(3.6nm)/ Co(1.2nm)/Cu(3.6nm)]30 时，巨磁电阻（GMR ）值可达5.4% ，对应的磁电阻灵敏度SV 为 0.2%/Oe ，饱和磁场仅为350Oe。自旋阀多层膜的GMR值起初随着铜层厚度的增加而增大，并发生周期性 振荡，当Cu层厚度大于3.6nm时，GMR值逐渐减小。 关键词：自旋阀；电沉积；巨磁电阻；超晶格 Electrodeposition and Giant Magnetoresistance Effect of Spin-valve Multilayers JIANG Ying ， YAO Su-wei ， ZHANG Wei-guo (Shanshan Surface Technology Research Laboratory, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China) Abstract: Spin-valve structures have been the most promising giant magnetoresistance (GMR) materials for magnetic heads and memories owing to their low saturation field properties and high sensitivities. Compared with physical techniques, electrochemical method has been a favorable way of fabricating GMR thin films for its simplicity, low cost, and ease of production. [Ni Fe /Cu/Co/Cu] spin-valve multilayers were firstly 80 20 n fabricated on n-Si(111) substrates by double bath potentiostatic electrodeposition. A well-defined periodical structure and the orientation of crystalline growth were characterized by X-ray diffraction. Magneto-transport properties of spin valves were investigated by four-probe technique. Hysteresis loops were tested by vibrating sample magnetometer (VSM) at room temperature. The maximum room temperature GMR value of 5.4% was achieved with a sensitivity up to 0.2%/Oe and a saturation field of