10光电子学第2章-5.pptVIP

8. The phototransistor (光电晶体管) 9. Metal-Semiconductor detectors 10. Quantum well intersubband detector 11. Advanced Detectors * * _ + b e c Emitter is heavy doped: n+ The area of collector is large Base layer is narrow and light doped Emitter Base Collector 对共发射极晶体管： working state: EB junction is forward biased; BC junction is reverse biased; Base is dangling. high gain due to the transistor action(晶体管整流放大作用); For phototransistor: The advantage of phototransistor: low noise compared to an APD. Ⅰ. The structure Contact Contact layer: lightly doped , absorbing layer. thick enough to allow the Schottky barrier formation; thin enough to allow light to pass through metal layer: Contact Contact Ⅱ. M-S Junction Before MSJ formation Schottky barrier When light impinges upon the diode : i) and (breakdown voltage) Electrons in the metal overcome the Schottky barrier to semiconductor ii) and similar to PIN iii) and similar to APD Advantage of M-S detectors : high speed (f 150GHz) Ⅲ. MSM detector Two Schottky barriers are placed in a planar geometry close to each other Photogenerated electrons Photogenerated holes positive polar negative polar Advantage of MSM: low dark current , internal gain, OEIC application (光电子集成应用) Advantage of Q-W detector (such as GaAs/InP QwD): to detect long wavelength radiation Note : The ground state electrons should not produce a current; It should be possible to excited state electrons from the quantum well so that a signal can be produced. The excited electron state should be designed to be near the top of the quantum well barrier. Low temperature Narrow bandgap materials are “soft” and difficult to produce— Device yield is poor . Established GaAs or InP based technologies c