PVD掉电检测与BKP入侵检测.docxVIP

PVD掉电中断配置void PVD_NVIC(void){ NVIC_InitTypeDef NVIC_InitStructure;??/* Configure one bit for preemption priority */?NVIC_PriorityGroupConfig(NVIC_PriorityGroup_1);??/* Enable the PVD Interrupt */?NVIC_InitStructure.NVIC_IRQChannel = PVD_IRQn;?NVIC_InitStructure.NVIC_IRQChannelPreemptionPriority = 0;?NVIC_InitStructure.NVIC_IRQChannelSubPriority = 0;?NVIC_InitStructure.NVIC_IRQChannelCmd = ENABLE;?NVIC_Init(NVIC_InitStructure);}void PVD_Init(void){ EXTI_InitTypeDef EXTI_InitStructure; PWR_PVDLevelConfig(PWR_PVDLevel_2V9); // 设定监控的阀值 PWR_PVDCmd(ENABLE); // 使能PVD? EXTI_InitStructure.EXTI_Line = EXTI_Line16; // PVD连接到中断线16上? EXTI_InitStructure.EXTI_Mode = EXTI_Mode_Interrupt; //使能中断模式 //EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Falling;//表示电压从低上升到高于阀值时产生中断 EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Rising;//表示电压从高下降到低于阀值时产生中断 //EXTI_InitStructure.EXTI_Trigger = EXTI_Trigger_Rising_Falling;//表示电压上升或下降越过设定阀值时都产生中断 EXTI_InitStructure.EXTI_LineCmd = ENABLE; // 使能中断线 EXTI_Init(EXTI_InitStructure); // 初始化exti寄存器}掉电后，将数据保存到flash，掉电之前要把flash中的数据先清除，因为flash擦除需要时间很长，以至于无法办存下来，这段代码中的擦出操作需要提出来！void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite){ u32 secpos;? ? ? ?? ? //扇区地址 u16 secoff;? ? ? ?? ? //扇区内偏移地址(16位字计算) u16 secremain; //扇区内剩余地址(16位字计算) u16 i; u32 offaddr;? ?//去掉0的地址 if(WriteAddrSTM32_FLASH_BASE||(WriteAddr=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址 FLASH_Unlock();? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? //解锁 offaddr=WriteAddr-STM32_FLASH_BASE;? ? ? ? ? ? ? ? //实际偏移地址. secpos=offaddr/STM_SECTOR_SIZE;? ? ? ? ? ? ? ? ? ? ? ? //扇区地址?0~127 for STM32F103RBT6 secoff=(offaddr%STM_SECTOR_SIZE)/2;? ? ? ? ? ? ? ? //在扇区内的偏移(2个字节为基本单位.) secremain=STM_SECTOR_SIZE/2-secoff;? ? ? ? ? ? ? ? //扇区剩余空间大小? if(NumToWrite=secremain)secremain=NumToWrite;//不大于该扇区范围 while(1)? { STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容 for(i=0;isecremain;i++)//校验数据 { if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需