基于叉指结构的三维电容设计.docx

基于叉指结构的三维电容设计集美大学信息工程学院电子科学与技术专业 2015届 林远双 学号：2011850024[摘要]随着电子电路技术的飞速发展，电容在密度和高频方面的局限性越来越明显，以往很多提高电容密度的方法是引入高介电常数（高）介质和减小介质层厚度，但无法从本质上解决问题。本文在讨论电容基本工作原理、结构和特性的基础上，设计出一种基于叉指结构的新型三维电容。利用HFSS和ADS等电磁仿真软件进行三维电容建模以及电容基础特性分析，设计出叉指形、分形化的三维电容，通过S参数提取以及电容的等效电路，仿真、优化出最佳的等效电容值和等效电感值。研究表明，当电容结构保持不变时，电容的宽距比从19:2减小到1:2，其等效电路的等效电容值减小了36.7%，寄生电感减小了44.8%；当电容宽距比保持不变时，通过分形化技术，等效电路的寄生参数有所减少。这些研究，在电容的集成化、微型化应用等方面均有普遍的积极意义。[关键词]三维电容 叉指结构 分形化 等效电路Interdigital capacitor design based on three-dimensional structureLin YuanshuangNO: 2011850024, Electronics Science and Technology Major, 2015,Information Engineering College of Jimei UniversityAbstract:With the rapid development of electronic circuit technology.In terms of density and high frequency capacitance has limitation more and more obvious.Before,it was pulled in high media , reduce the thickness of media and increase ermittivity to increase capacitance density method,but,it’s not to solve problem in the essentially.This article has design based on the new three-dimensional structure of an interdigital capacitor on the basis of the capacitance works,structure and property.Make the use of HFSS soft to set up 3D capacitance modeling to design a 3D capacitance of interdigital,fractal.It’s a value of equivalent capacitance and equivalent inductance for simulation and optimization by the way of S parameters and equivalent circuit.Studies shows that when the capacitor structure remains unchanged,the capacitance of the ratio wide to spacing from 19:2 decrease to 1:2,the capacitance value of the equivalent circuit has decreased 36.7%,parasitic inductance has decreased 44.8%.When the capacitance of the ratio wide to spacing remains unchanged,by use of the fractal technology,the parasitic of the equivalent circuit has decreased.For the studies,is’s important to the development of circuit,capacitance property,integrated.Key words：3D Capacitance Interdigitated structure Fractal technology Equivalent circuit目录引言1第一章 绪论21.1 背景21.2 电容介绍21.3 发展现状3第