AO5800E;中文规格书,Datasheet资料精选.pdf

AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, an ID = 0.4A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON) 1.6Ω (VGS = 10V) small SC89-6L footprint. It can be used for a wide RDS(ON) 1.9Ω (VGS = 4.5V) variety of applications, including load switching, low current inverters and low current DC-DC converters.AO5800E and AO5800EL are electrically identical. ESD PROTECTED! -RoHS compliant -AO5800EL is Halogen Free SC-89-6 D1 D2 S1 G1 D2 G1 G2 D1 G2 S2 S1 S2 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain TA=25°C 0.4 Current A, F TA=70°C ID