n面和ga面极化.pdfVIP

JOURNAL OF APPLIED PHYSICS VOLUME 85, NUMBER 6 15 MARCH 1999 Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher,a) J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman School of Electrical Engineering, Cornell University, Ithaca, New York 14853 R. Dimitrov, L. Wittmer, and M. Stutzmann Walter Schottky Institute, TU-Munich, Am Coulombwall, 85748 Garching, Germany W. Rieger and J. Hilsenbeck Ferdinand Braun Institute, Rudower Chaussee 5, 12489 Berlin, Germany Received 24 September 1998; accepted for publication 13 December 1998 Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face Al Ga N/GaN/Al Ga N and N-face GaN/Al Ga N/GaN heterostructures used for x 1 x x 1 x x 1 x the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15x 0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6 1012 to 2 1013 cm2 in the GaN channel with increasing Al-concentration from x 0.15 to 0.