Effects of Nitrogen Incorporation in lanthanum based dielectric films英文文献.pdfVIP

Integrated Ferroelectrics , 97: 129–142, 2008 Copyright © Taylor Francis Group, LLC ISSN 1058-4587 print / 1607-8489 online DOI: 10.1080/10584580802088991 Effects of Nitrogen Incorporation in Lanthanum-Based Dielectric Films V. Edon,1,a M.-C. Hugon,1 B. Agius,1 K. P. Bastos,2 L. Miotti,2 C. Driemeier,2 L. Salvador,2 C. Krug,2 I. J. R. Baumvol,3 C. Eypert,4 and O. Durand5,b 1 ´ Laboratoire de Physique des Gaz et des Plasmas, Universite Paris-Sud, UMR8578, 91405 Orsay, France 2 ´ Instituto de Fısica, Universidade Federal do Rio Grande do Sul, 91501-970 Rio Grande do Sul, Brazil 3Universidade de Caxias do Sul, CCET, 95070-580, Rio Grande do Sul, Brazil 4 HORIBA Jobin Yvon S.A.S., Thin Film Division, 5 av. Arago, 91380 Chilly-Mazarin, France 5 ´ Laboratoire d’Analyses Physiques Avancees, Thales Research Technology, RD 128, 91767 Palaiseau, France ABSTRACT Thermal stability, electrical and structural properties induced by nitrogen incorporation in lanthanum-based high-k dielectrics were investigated. Thermal growth of a thin silicon oxynitride previously to LaAlO3 deposition induced higher dielectric constant, lower equivalent oxide thickness, and better interfacial stability during post-deposition anneal- ing of MOS structures. But it also degraded others electrical and structural properties such as leakage current and charges densities, and interfacial roughness. Deposition of LaAlON films, either by reactive sputtering in Ar/N2 plasma, or by thermal nitridation in ammonia of LaAlO3 , reduce