Improvement of sputtered Galfenol thin films for sensor applications英文文献.pdfVIP

IOP PUBLISHING SMART MATERIALS AND STRUCTURES Smart Mater. Struct. 19 (2010) 055013 (7pp) doi:10.1088/0964-1726/19/5/055013 Improvement of sputtered Galfenol thin films for sensor applications 1 2 1 3 B Adolphi , J McCord , M Bertram , C-G Oertel , 1 1 ¨ 2 1 1 U Merkel , U Marschner , R Schafer , C Wenzel and W-J Fischer 1 Technische Universit¨at Dresden, Semiconductors and Microsystems Technology Laboratory, D-01062 Dresden, Germany 2 Leibniz Institute for Solid State and Materials Research IFW Dresden, Postfach 270116, D-01171 Dresden, Germany 3 Technische Universit¨at Dresden, Institute of Structural Physics, D-01062 Dresden, Germany E-mail: barbara.adolphi@tu-dresden.de Received 3 September 2009, in final form 22 February 2010 Published 31 March 2010 Online at stacks.iop.org/SMS/19/055013 Abstract Galfenol Fe83Ga17 films are sputtered on Si wafers without, and with Ti or Ti/Cu metallic seed layers in order to obtain a magnetoelastic layer which is sensitive to bending deformations of the compound structure. The layer thicknesses range from 100 nm to 5 μm. Layer morphology, texture, and the Villari effect are examined. The texture of the Galfenol films is strongly influenced by the seed layer. No low-index texture components are found for films directly deposited on Si and SiO2 . On Ti, a (111) texture is formed on layers with more than 1000 nm thickness. A favorable (110) fiber texture is formed on Ti/Cu. Deforming the bimorphs (Si + layer system) by 0.012%, the Villari effect is detected due to the change in relative permeability. The maximum change occurs for Galfenol films with a thickness of 1 μm