Wet Chemical Etching of Zn containing oxides and HfO2 for the fabrication of Transparent TFTs英文文献.pdfVIP

Mater. Res. Soc. Symp. Proc. Vol. 1201 © 2010 Materials Research Society 1201-H10-25 Wet Chemical Etching of Zn-containing oxides and HfO for the fabrication of 2 Transparent TFTs Jae-Kwan Kim, Jun Young Kim, Seung-Cheol Han, Joon Seop Kwak, and Ji-Myon Lee* Department of Materials Science and Metallurgical Engineering, Sunchon National University, 315 Maegok, Sunchon, Chonnam 540-742, Korea ABSTRACT The etch rate and surface morphology of Zn-containing oxide and HfO films after wet 2 chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO films by BF acid proceeded through lateral widening and merging of the initial 2 irregular pits. INTRODUCTION Oxide-based thin film transistors attract much attention due to their advantageous properties such as high mobility, high electrical conductivity, and high visible transmittance [1]. Zn-containing oxide thin film transistors (TFTs) are a promising large-area backplane electronic device for flat panel displays such as liquid crystal displays and organic light-emitting displays [2,3]. Zn-containing oxide and hafnium oxide (HfO ) have been investigated for use in the x fabrication of transparent thin film transistors (TTFTs). A number