Physical limitations on frequency and power parameters of transistors英文文献.pdfVIP

PHYSICAL LIMTATIONS ON PREQUEXCY M D POWERPARAMETERSOF TRANSISTORS E. 0. Johnson BCA Electronic Components and Devices Somerville, New J e r s e y Summary A simple analysis shows that the ultimate offfrequency.Device power gain is introduced performance limits of a t r a n s i s t o r are set by the bychargecontrolconsiderations.Thisleadsto productEvs/21,where E is thesemiconductor’s a r e l a t i o n l i n k i n g power gain, dynamicrange,and d i e l e c t r i c breakdown strength and vs is its min- cross-modulation characteristics. o r i t yc a r r i e rs a t u r a t e dd r i f tv e l o c i t y . This product,having a valueofabout 2 x lo1’ volts! The mode ofapproach is t o establish upper secondforsilicon,emphasizesthat a semiconduc- boundson transistor performance bydeveloping a t o r m a t e r i a l has a mximum c a p a b i l i t y f o r e n e r - highly idealized and simplified device model whose gizing the electric chargesthatprocess a s i g n a l . performance is n o t l i k e l y t o b e s u r p a s s e d by that Ifthedeviceoperatingfrequency i s high, the of any attainable design, no matter how optimized frequencytimeperiod is shortandonly a small orcleverlyconceived.Thisidealizedperformance amount ofener