非晶碳的制备及在太阳能电池中的应用word论文.docxVIP

非晶碳的制备及在太阳能电池中的应用word论文.docx

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AbstractBecause of that carbon material and silicon material is in the same group elements, they have the similar physical and chemical properties. Besides carbon is environmental protection and rich, using carbon partly instead of silicon to make photovoltaic materials is feasible. In this paper, deposite carbon films containing palladium to a natural oxide layer on silicon wafer by using magnetron sputtering method, then test and analyze the related physical properties and photovoltaic effect of carbon films. The main results are as follows:Through the preliminary experimental exploration, we can get the best photovoltaic effect preparation condition of carbon doped with palladium: 4Pa, 1h, 30sccm, 65W,350℃.Carbon films prepared under different pressures are dense, and the average particle size is less than 30nm, and the largest size is at 5Pa. In the spectral range of 300nm-900nm (1.38~4.13eV) the transmittance is more than 70%, and the spectral absorption rate is about ~104cm-1. This range of wavelengths occupies most of the energy in the solar spectrum. Under visible light and longer wavelength range, spectrum absorption coefficient is best pressure is 4Pa, followed by 3Pa and 5Pa, and that is opposite to their transmission spectra.The optical band gap was calculated by carbon film optical absorption spectra and the Tauc formula. If the form of carbon is amorphous, the optical band gap of 3Pa, 4Pa, 5Pa are respectively 1.25eV, 0.75eV, 1.75eV. If the carbon is in crystal form, the optical band gaps of three kinds will be above 3.25eV. The absorption spectrum will only in the range below 380nm. That is inconsistent with the actual situation from the absorption spectrum, so that the form of carbon film is amorphous is more reasonable.From the value of FWHMG and position of the G peak, it can be concluded that content of sp2 was the highest and disordered graphite was lowest at 4Pa. The battery has the highest short-circuit current Isc, 1.011mA and open circuit v

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