[工程科技]Radiation damage to neutron and proton irradiated GaAs particle detectors.pdfVIP

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[工程科技]Radiation damage to neutron and proton irradiated GaAs particle detectors.pdf

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[工程科技]Radiation damage to neutron and proton irradiated GaAs particle detectors

Freiburg-EHEP-97-03 Radiation damage to neutron and proton irradiated GaAs particle detectors * M.Rogalla , Th.Eich, N.Evans, S. Joost, M. Kienzle, R.Geppert, R.Göppert, R.Irsigler, J.Ludwig, K.Runge, Th.Schmid Albert-Ludwigs-Universität Freiburg, Fakultät für Physik, Hermann-Herder-Str. 3, 79104 Freiburg, Germany As part of the RD8 collaboration Abstract The radiation damage in 200 µm thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 7 9 7 9 8.9*10 Ωcm were studied using α-spectroscopy, signal response to minimum ionising 1 r particles (MIPs), I-V and CV-measurements. The results have been analysed to investigate the p A influence of the substrate resistivity on the detector performance after neutron and proton 4 2 irradiation. The leakage current density, signal response to α-particles and MIPs show a strong 0 0 4 dependence on the resistivity before and after irradiation. An observed decrease of the electron 0 7 9 mean free drift length before and after irradiation with increasing substrate resistivity can be / x e explained by a model involving the different ionisation ratios of defects, which are introduced - p e by the irradiation. Comparison of the radiation damage due to neutrons and protons gives a h hardness factor of 7 ± 0.9 for 24 GeV/c protons. The best detectors show a response to MIPs -