电子信息工程毕业设计外文翻译.docx

A Novel Built- in CMOS Temperature Sen sor for VLSICircuitsWang Nailong, Zhang Sheng and Zhou Runde( Institu te of M icroelectronics, T sing hua U niversity , B eij ing , Ch ina)Abstract: A novel temperature sensor is developed and presented especially for the purpose of online the rmalmoni to ring of VLSI chips. This sensor requires very small silicon area and low power consumption, and the simulation results show that its accuracy is in the o rder of 018℃. The proposed sensor can be easily implemented using regular CMOS process techno logies, and can be easily integrated to any VLS I circuits to increase their reliability.Key words: temperature sensor; thermal testability; frequency output.EEACC: 1265A; 2560; 2570DCLC number: TN 47　　　Document code: A 　　　Article ID: (2004) 1　IntroductionDue to the advances in the fabricaion processfield of in tegrated circu its, the component den sityand the overall power dissipat ion of the highperfo rmance VLSI chips increase cont inuously. At thebeginning of this century, the power dissipated in asingle ch ip has exceeded 100W , and tightly packedchip assemblies as the multichip modules can evendissipate thou sandswatts. Therefore, the thermalstate of integrated circu its has been always a greatprob lem concerned and is considered as abottleneck in increasing the in tegrat ion of elect ron ic system s.To overcome this problem , many researchersdeveloped low 2power design techn iques for VLS Isystems. In order to avoid thermal damages,continuous thermal monitoring should be appliedduring both theproduction reliability testing andthe field operation. An eff icient way is to buildtemperatu resensors in to all VLSI chips, with theapp ropriate circuitryp roviding easy readout. Insome earlier works , the researchers used theparasitic, lateral or sub strate bipolartran sistors,which can be realized in mo st of the CMOS processes, as thermal sen so rs. These are u suallyPTAT sensors. The weakness of these senors isthat the bipolar st