Electrical transport properties of TiCoSb half Heusler phases that exhibit high resistivity表现出高电阻率的半赫斯勒相的电输运性质.pdfVIP

Home Search Collections Journals About Contact us My IOPscience Electrical transport properties of TiCoSb half-Heusler phases that exhibit high resistivity This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2001 J. Phys.: Condens. Matter 13 77 (/0953-8984/13/1/308) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 64 The article was downloaded on 03/06/2010 at 04:06 Please note that terms and conditions apply. INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 13 (2001) 77–89 /Journals/cm PII: S0953-8984(01)13497-1 Electrical transport properties of TiCoSb half-Heusler phases that exhibit high resistivity 1 1 2 2 1 Y Xia , V Ponnambalam , S Bhattacharya , A L Pope , S J Poon and T M Tritt2 1 Department of Physics, University of Virginia, Charlottesville, VA 22901, USA 2 Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA Received 25 April 2000, in final form 19 October 2000 Abstract Electrical transport measurements have been performed on doped and undoped TiCoSb half-Heusler phases. The semiconducting properties are found to be more robust than those reported for MNiSn (M = Ti, Zr, Hf ). Undoped TiCoSb phases exhibit large n-type Seebeck coefficients and high resistivities that reach −500 µV K−1 at 300 K and ∼1500 cm at 4.2 K, respectively. A tendency towards carri