利用EBSD分析盲孔填充之各阶段的电镀铜微结构-中国矿冶工程学会.PDFVIP

利用EBSD分析盲孔填充之各階段的電鍍 銅微結構 EBSD Characterizat ion of Blind Hole Fillings by Electrolyt ic Cu Deposition 1 1 1 1 2 1 1 1 1 C.C. Chen , J.S. Chang , L.H. Hsu , M.K. Lu , C.E. Ho Blind hole (BH) electrolytic Cu filling three-dimensional integrated is widely used in high density interconnection circuit, 3D IC printed circuit board, (HDI) technology for advanced printed PCB high density interconnection, cir cuit b oar ds (PCB s) . We stu died th e HDI m or p h o l og i c a l an d cr y st a l l og r ap h i c through hole blind hole evolutions of the electrolytic Cu fillings using an optical microscope (OM) and a field-emission scanning electron microscope / (FE - SEM) equ ipp ed w ith an electr on backscatter diffraction (EBSD) analysis field-emission scanning electron microscope, system. We observed that the BH Cu fillings FE-SEM electron went through three different deposition backscatter diffraction, EBSD regimes: ( 1) the initial deposition regime (t = 20– 25 min), (2) the bottom up deposition regime (t = 25 – 35 min), and (3) the final 1 t = 20– 25 min deposition regime (t = 35– 80 min). EBSD conformal 2 t = 25– 35 analyses showed that the Cu grains were min 3 predominantly oriented along [111]||TD (TD: t = 35– 80 min transverse direction) in the initial deposition EBSD regime. In the bottom up deposition regime, [111]||TD (TD: tra