低温电热机制对奈米线ZnOAl结构之界面机制探讨-Yoke.PDFVIP

低溫電熱機制對奈米線 ZnO/Al 結構之界面機制探討 曾譯葦 洪飛義* 呂傳盛 陳冠仁 蕭人瑄 蕭彤宣 國立 成功大學材料科學及工程學系與奈米科技暨微系統工程研究所 Both solution nano wire ZnO and sputtered Al thin film on SiO2 as the wire-film structure, and the Al film was a conductive channel for electrical induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nano-structure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form AZO/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current induced temperature was ~2110C (solid-state doped process) and so could be applied to low temperature optoelectronic devices. Keywords: ZnO, nano wire, solution method, electrical current induced crystallization (EIC), Al doped. Email: fyhung@mail.ncku.edu.tw 1. Introduction for applications [7,12]. The solution method is a Zinc oxide (ZnO) is a II-VI low temperature process, but doping metal atoms compound semiconductor with a hexagonal and concentration control are difficult. Also, the quartzite structure. One-dimensional ZnO effects of Al atom doping using the solid-state nanowires have the advantages of light method on 1D ZnO nanowires have still not extraction efficiency and different light-emitting been reported, and in particular, the electric mechanisms (UV emission, Green emission), so current induced crystallization (EIC) process [ 13] they have extensive applications in is a solid-state method at room temperature and nano-optoelectronic de