modulation in SiGe APL06doc - ResearchGate调制的SiGe apl06doc -研究之门.docVIP

modulation in SiGe APL06doc - ResearchGate调制的SiGe apl06doc -研究之门.doc

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modulation in SiGe APL06doc - ResearchGate调制的SiGe apl06doc -研究之门.doc

Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures A. Lupua), D. Marris, D. Pascal, J.-L. Cercus, A. Cordatb), V. Le Thanhc) and S. Laval Institut d’Electronique Fondamentale, CNRS UMR 8622, Université Paris Sud, 91405 ORSAY Cedex, France (Received Experimental results for the refractive index variation obtained by hole depletion in SiGe/Si multiple quantum wells inserted in a reverse-biased pin junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2(10-5 V-1 are in quite good agreement with modeling. PACS numbers: 42.79.-e, 42.82.-m, 42.82.Ds, Electrorefractive index variation in waveguides plays an important role for the realization of phase/amplitude optical modulators as well as for switching and routing applications at optical telecommunication wavelengths (1.3μm and 1.55 μm). However the challenge is to achieve fast and large index modulation in Silicon-based waveguides, which is not an obvious task. Pockels effect is absent in bulk unstrained silicon, while refractive index perturbations produced by applied fields are rather small because of the indirect band-gap. So, for an electric field E=105?V/cm, the index variation produced by Frantz-Keldysh or Kerr effect 1 is of the order of 10-6. A more significant index variation can be obtained by carrier injection or depletion in a pin diode. Depletion operation is more advantageous than carrier injection. The drawbacks of the injection operation are the time response limited by the minority carrier lifetime and the thermal heating induced by a large current for a forward biased diode. The use of carrier depletion under reverse bias operation offers much faster response time and smaller heating effects. Such a structure can be integrated in a submicron Silicon-On-Insulator (SOI) waveguide. The structure used for modulation studies is schematica

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