半导体器件原理4.pptVIP

Diode Layout Space Charge Region Formation at the pn Junction Carrier Distribution Diode Introduction Diode Equation where IS = reverse saturation current (A)  vD = voltage applied to diode (V) q = electronic charge (1.60 x 10-19 C) k = Boltzmann’s constant (1.38 x 10-23 J/K) T = absolute temperature (K) n = nonideality factor (dimensionless) VT = kT/q = thermal voltage (V) (25 mV at room temp.) IS is typically between 10-18 and 10-9 A, and is strongly temperature dependent due to its dependence on ni2. The nonideality factor is typically close to 1, but approaches 2 for devices with high current densities. Do not confuse nonideality factor n with free electron density n! Diode Voltage and Current Calculations (Example) Diode Current for Reverse, Zero, and Forward Bias Reverse bias: Zero bias: Forward bias: Diode Spice Model Junction Breakdown Thermal instability Tunneling effect Avalanche multiplication 1.Thermal instability 反向电压 功耗 热耗散 结温 IR IR T 2. Tunneling effect 重掺杂P+—N+结能带图 2. Tunneling effect 隧道效应 随着电场E的增大，d变得很小，就使隧道电流IT大大增大 温度系数为负 3.Avalanche multiplication Electric field 碰撞电离 Ionization rate: Reverse Breakdown Mechanisms Avalanche BreakdownSi diodes with VZ greater than about 5.6 volts breakdown according to an avalanche mechanism. As the electric field increases, accelerated carriers begin to collide with fixed atoms. As the reverse bias increases, the energy of the accelerated carriers increases, eventually leading to ionization of the impacted atoms. The new carriers also accelerate and ionize other atoms. This process feeds on itself and leads to avalanche breakdown. 3.Avalanche multiplication ? Avalanche multiplication factor M 3.Avalanche multiplication Breakdown