以不同模型技术评价双闸极互补式金氧半场效电晶体的电路效能.PDFVIP

國立宜蘭大學工程學刊(2006) 第二期第 15～26 頁 以不同模型技術評估雙閘極互補式 金氧半場效電晶體的電路效能 江孟學 國立宜蘭大學電子工程學系助理教授 摘 要 此論文主要是探討雙閘極互補式金氧半場效電晶體模型技術，其應用範圍在於元件與電路的模擬。 這些模型技術包括了查表模型、精簡模型及混合式模擬，各種模型技術各有其特色。我們運用了不同的 模型技術來評估雙閘極互補式金氧半場效電晶體的電路效能，並且在電路應用的設計上，提供了最佳化 的設計方法。 關鍵字 ：雙閘極金氧半場效電晶體，鰭式場效電晶體，TCAD，精簡模型 宜蘭大學學報 第二期 On the Evaluation of Double-Gate CMOS Circuit Performance via Different Modeling Techniques Meng-Hsueh Chiang Assistant Professor, Department of Electronic Engineering, National Ilan University Abstract Double-gate CMOS modeling techniques for device and circuit simulations are presented. The modeling techniques, including look-up table modeling, compact device modeling, and mixed-mode simulation, have their unique features suitable for evaluating high performance Double-Gate CMOS circuits. Keywords ：Double-Gate MOSFET, FinFET, TCAD, compact model. 16 以不同模型技術評估雙閘極互補式金氧半場效電晶體的電路效能 I. Introduction The examples for these modeling techniques are reviewed in following sections, respectively. Interest in the double-gate (DG) MOSFET has been growing as the end of the ITRS roadmap [1] is being II. Look-up table modeling approached, the conceptual figure of which is shown in Fig. The methodology of LUT modeling is shown in 1. The inherent gate-gate charge coupling via t