M48T08Y.10MH1E;M48T08Y.10MH1F;M48T18.150PC1;M48T08.150PC1;M48T18.100PC1;中文规格书,Datasheet资料.pdfVIP
- 4
- 0
- 约3.03万字
- 约 11页
- 2018-04-06 发布于未知
- 举报
M48T08
M48T08Y, M48T18
5 V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM
Features
■ Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, and battery
™
■ BYTEWIDE RAM-like clock access
■ BCD coded year, month, day, date, hours,
minutes, and seconds
■ Typical clock accuracy of ±1 minute a month, at
28
25 °C
1
■ Automatic power-fail chip deselect and WRITE
protection
PCDIP28
■ WRITE protect battery/crystal
VPFD = power-fail deselect voltage): CAPHAT™
– M48T08: VCC = 4.75 to 5.5 V;
4.5 V ≤ VPFD ≤ 4.75 V
– M48T18/T08Y: VCC = 4.5 to 5.5 V;
4.2 V ≤ VPFD ≤ 4.5 V
■ Software controlled clock calibration for high SNAPHAT®
accuracy applications battery/crystal
■ Self-contained battery and crystal in the
™
CAPHAT DIP package
■ Packaging includes a 28-lead SOIC and
SNAPHAT® top (to be ordered separately)
■ SOIC package provides direct connection for a
snaphat top which contains the battery and
原创力文档

文档评论(0)