微电子应用低介电系数薄膜机械性质与界面黏着力之研究.pdf

微電子應用低介電係數薄膜機 械性質與界面黏著力之研究 摘要 在本論文中以三甲基矽烷與氧為先導物 ，利用電漿輔助化學氣相沉 積法，在矽基材上製造碳摻雜 二氧化矽薄膜，其介電常數約為 3 左右。 探討化學機械研磨對於薄膜機械性質的影響，利用撓曲技術量測薄膜殘 留應力，奈米壓痕法量測薄膜的彈性係數與硬度，而四點彎曲被用來量 測薄膜的界面黏著力。結果顯示研磨壓力居於關鍵的角色，適當的選擇 研磨壓力可能鬆弛薄膜殘留應力，但也降低其界面破壞界面能。在低介 電薄膜鍍上鉭擴散障礙層與銅膜，其機械性質較不受機械研磨壓力的影 響。 關鍵字：低介電薄膜、化學機械研磨、殘留應力、界面破壞能 I Abstract Cabon doped silicon oxide low-k thin films deposited by the plasma enhanced chemical vapor deposition technique from trimethylsilane and oxygen have been prepared. Effects of chemical mechanical polishing on the mechanical properties and interfacial fracture energy were investigated. The residual stresses in thin films were calculated by the Stoney’s equation by virtue of measuring the bending radius of curvature of the wafers. The Young’s modulus and hardness of thin films were obtained by the nano-indentation. The low-k thin film adhesion testing was conducted under mixed-mode loading conditions using four-point bending technique. It was found that applied stresses (down force) play a key role in the mechanical characteristics of the low-k films during CMP. The experimental results reveal the low-k films with lower residual stress tend to have a weakened interfacial fracture energy. It was also found that the down force itself has little effect on the mechanical properties of copper film. Keywords:low-k thin film 、CMP 、residual stress 、interfacial fracture energy II 誌 謝 在經過了研究所兩年的生活之後，覺得讀書真的好辛苦，不過終究也熬 過來了。在這兩年的生活，要感謝的是指導教授鄭慶安老師不厭其煩的教導 讓我有實務的經驗，及黃、蕭兩位工程師在試片方面與儀器操作的指導，以 及成大機械林仁輝教授實驗室博士班學生魏伯任學長在奈米壓痕試驗機與