化学机械抛光中背垫对硅片表面接触压强分布及宏观表面形貌的影响.docVIP

化学机械抛光中背垫对硅片表面接触压强分布及宏观表面形貌的影响 第29卷第4期 2008年4月 兵工 ACTAARⅣMENTARII Vo1.29No.4 Apr.2008 化学机械抛光中背垫对硅片表面接触压强分布 及宏观表面形貌的影响 吕玉山,张辽远,王军,冯连东 (1.沈阳理工大学机械工程学院,辽宁沈阳110168;2.中国检疫检验科学研究院北京1OOO25) 摘要:为了获得单晶硅片化学机械抛光过程中背垫对接触压强分布的影响规律,建立了有背 垫抛光过程的接触力学模型和边界条件,利用有限元方法进行了有背垫时的接触压强分布的计算 与分析,并利用抛光实验对计算结果进行了验证,获得了硅片与抛光垫的接触表面压强分布形态, 以及背垫的物理参数对压强分布的影响规律.结果表明,在有背垫时接触压强的分布仍存在不均 匀性,而且在硅片外径邻域内接触压强最大,这导致了被加工硅片产生平面度误差与塌边.增加背 垫的弹性模量和泊松比,可以改善接触表面压强分布均匀性,使硅片有效区域的平面度形貌变得更 好 关键词:材料表面与界面;化学机械抛光;单晶硅片;接触压强分布;平面度误差 中图分类号:TN305.2;TH161文献标志码:A文章编号:1000—1093(2008)04—0495.05 TheEffectofCarrierfilmsonContactPressureDistributionand Macro.surfaceProfileofSiliconWaferinChemical-mechanicalPolishing LUYu—shan,ZHANGLiao—yuan,WANGJun,FENGLian.dong (1?SchoolofMechanicalEngineering,ShenyangLigongUniversity,Shenyang110168,Liaoning,China; 2.ChineseAcademyofInspectionandQuarantine,Beijing100025,China) Abstract:Inordertoobtaintheeffectofcarrierfilmoncontactpressuredistributioninthechemica1一 mechanicalpolishing(CMP)ofsiliconwafer,amechanismmodelandaboundaryequationwereset up,thenthecontactpressuredistributionwascalculatedandanalyzedbyuseoffiniteelementmethod. andthecalculatedresultwasverifiedbypolishingexperiments. AtlastthepressuI.edistributionofcon— tactsurfacebetweensiliconwaferandpolishingpadandtheruleofthatthephysicalparametersofcar— rierfilmhadaneffectonpressuredistributionwereobtained,andthemostimportantrelationbetween thenon—uniformityofcontactpressuredistributionandtheflatnesserrorofsiliconwaferinCMPwas ensured.Theresultshowsthatthecontactpressuredistributionisnon—uniformandtheDressureinthe outsideborderlineofsiliconwaferismaximal,whichleadstotheflatnesserr0rsandco11aDseofsillcon wafer.WhenYoungsmodulusandPoissonsratioofcarrierfilmsareincreased ,theunifo肌itvof contactpressuredistributioncanbeimproved,andtheflatnesstopographyintheavailableregionof wafersurfacebecomemuchbetter. Keywords:sufaceandinterfaceforthematerial;chemical—mechanicalpollshing;sillconwafer;con— tactpressuredistribution;flatneSSerror 收稿日期:2007…052